Epitaxial growth and characterization of dilute nitride based “W”-quantum well heterostructures for laser applications

In this present thesis, the growth by metal organic vapor phase epitaxy (MOVPE) of GaAs-based materials is investigated to shift the emission wavelength to longer wavelengths. This was addressed by incorporating dilute amounts of nitrogen into “W” type-II heterostructures (WQWH). As materials, studi...

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Bibliografske podrobnosti

Glavni avtor:	Lehr, Jannik
Drugi avtorji:	Stolz, Wolfgang (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Format:	Dissertation
Jezik:	angleščina
Izdano:	Philipps-Universität Marburg 2022
Teme:	MOCVD MOVPE Halbleiterlaser Typ-II Heterostrukturen Nahinfrarot-Laser Epitaxie Physik Semiconductor lasers Near-infrared laser Physics Epitaxy Type-II Heterostructures Physik Physics
Online dostop:	PDF-Volltext
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