Epitaxial growth and characterization of dilute nitride based “W”-quantum well heterostructures for laser applications

In this present thesis, the growth by metal organic vapor phase epitaxy (MOVPE) of GaAs-based materials is investigated to shift the emission wavelength to longer wavelengths. This was addressed by incorporating dilute amounts of nitrogen into “W” type-II heterostructures (WQWH). As materials, studi...

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Autor principal:	Lehr, Jannik
Outros Autores:	Stolz, Wolfgang (Prof. Dr.) (Orientador)
Formato:	Dissertation
Idioma:	inglês
Publicado em:	Philipps-Universität Marburg 2022
Assuntos:	MOCVD MOVPE Halbleiterlaser Typ-II Heterostrukturen Nahinfrarot-Laser Epitaxie Physik Semiconductor lasers Near-infrared laser Physics Epitaxy Type-II Heterostructures Physik Physics
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