Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...

全面介紹

書目詳細資料

主要作者:	Stegmüller, Andreas
其他作者:	Tonner, Ralf (Prof. Dr.) (BetreuerIn (Doktorarbeit))
格式:	Dissertation
語言:	英语
出版:	Philipps-Universität Marburg 2015
主題:	Quantenchemie, Halbleiter density functional theory Dichtefunktionalformalismus semiconductors Chemie, Epitaxie reaction mechanism simulation epitaxy functionalization Chemie Chemistry & allied sciences
在線閱讀:	PDF-Volltext
標簽:	添加標簽 沒有標簽, 成為第一個標記此記錄!