Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...

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Detalhes bibliográficos

Autor principal:	Stegmüller, Andreas
Outros Autores:	Tonner, Ralf (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Formato:	Dissertation
Idioma:	inglês
Publicado em:	Philipps-Universität Marburg 2015
Assuntos:	Quantenchemie, Halbleiter density functional theory Dichtefunktionalformalismus semiconductors Chemie, Epitaxie reaction mechanism simulation epitaxy functionalization Chemie Chemistry & allied sciences
Acesso em linha:	Texto integral em PDF
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