Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...

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Manylion Llyfryddiaeth

Prif Awdur:	Stegmüller, Andreas
Awduron Eraill:	Tonner, Ralf (Prof. Dr.) (Cynghorydd traethodau ymchwil)
Fformat:	Dissertation
Iaith:	Saesneg
Cyhoeddwyd:	Philipps-Universität Marburg 2015
Pynciau:	Quantenchemie, Halbleiter density functional theory Dichtefunktionalformalismus semiconductors Chemie, Epitaxie reaction mechanism simulation epitaxy functionalization Chemie Chemistry & allied sciences
Mynediad Ar-lein:	Testun PDF llawn
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