Epitaxial growth and characterization of dilute nitride based “W”-quantum well heterostructures for laser applications

Epitaxial growth and characterization of dilute nitride based “W”-quantum well heterostructures for laser applications

In this present thesis, the growth by metal organic vapor phase epitaxy (MOVPE) of GaAs-based materials is investigated to shift the emission wavelength to longer wavelengths. This was addressed by incorporating dilute amounts of nitrogen into “W” type-II heterostructures (WQWH). As materials, studi...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijä: Lehr, Jannik
Muut tekijät: Stolz, Wolfgang (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Aineistotyyppi: Dissertation
Kieli:englanti
Julkaistu: Philipps-Universität Marburg 2022
Aiheet:
MOCVD MOVPE Halbleiterlaser Typ-II Heterostrukturen Nahinfrarot-Laser Epitaxie Physik
Physik
Semiconductor lasers Near-infrared laser Physics Epitaxy Type-II Heterostructures
Physics
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Saatavuus:
Hyllypaikka: urn:nbn:de:hebis:04-z2022-01098
Julkaisupäivä: 2022-05-05
Datum der Annahme: 2022-03-21
Downloads: 49 (2024), 92 (2023), 44 (2022)
Lizenz: https://creativecommons.org/licenses/by-nc-nd/4.0/
Linkki aineistoon: https://archiv.ub.uni-marburg.de/diss/z2022/0109
https://doi.org/10.17192/z2022.0109

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