Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...
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格式: | Dissertation |
語言: | 英语 |
出版: |
Philipps-Universität Marburg
2017
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在線閱讀: | PDF-Volltext |
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PDF-Volltext索引號: |
urn:nbn:de:hebis:04-z2018-05055 |
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Publikationsdatum: |
2018-11-14 |
Datum der Annahme: |
2017-12-12 |
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58 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018) |
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https://rightsstatements.org/vocab/InC-NC/1.0/ |
Zugangs-URL: |
https://archiv.ub.uni-marburg.de/diss/z2018/0505 https://doi.org/10.17192/z2018.0505 |