Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...

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Detaylı Bibliyografya
Yazar: Fuchs, Christian
Diğer Yazarlar: Stolz, Wolfgang (Prof. Dr.) (Tez danışmanı)
Materyal Türü: Dissertation
Dil:İngilizce
Baskı/Yayın Bilgisi: Philipps-Universität Marburg 2017
Konular:
III/V Halbleiter
MOVPE
VECSEL
Near-infrared Laser
Physik
MOCVD
Edge Emitter
Nahinfrarot-Laser
Epitaxy
Type-II Heterostructures
Epitaxie
Typ-II Heterostrukturen
III/V Semiconductors
Kantenemitter
Physics
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Detaylı Erişim Bilgileri
Yer Numarası: urn:nbn:de:hebis:04-z2018-05055
Yayın Tarihi: 2018-11-14
Datum der Annahme: 2017-12-12
Downloads: 58 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
Erişim Adresi URL: https://archiv.ub.uni-marburg.de/diss/z2018/0505
https://doi.org/10.17192/z2018.0505

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