Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...

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Bibliografiska uppgifter
Huvudupphovsman: Fuchs, Christian
Övriga upphovsmän: Stolz, Wolfgang (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Materialtyp: Dissertation
Språk:engelska
Publicerad: Philipps-Universität Marburg 2017
Ämnen:
III/V Halbleiter
MOVPE
VECSEL
Near-infrared Laser
Physik
MOCVD
Edge Emitter
Nahinfrarot-Laser
Epitaxy
Type-II Heterostructures
Epitaxie
Typ-II Heterostrukturen
III/V Semiconductors
Kantenemitter
Physics
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Signum: urn:nbn:de:hebis:04-z2018-05055
Utgivningstid: 2018-11-14
Datum der Annahme: 2017-12-12
Downloads: 57 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
Länk till materialet: https://archiv.ub.uni-marburg.de/diss/z2018/0505
https://doi.org/10.17192/z2018.0505

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