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Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...
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| Главный автор: | |
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| Другие авторы: | |
| Формат: | Dissertation |
| Язык: | английский |
| Опубликовано: |
Philipps-Universität Marburg
2017
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| Предметы: | |
| Online-ссылка: | PDF-полный текст |
| Метки: |
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Internet
PDF-полный текст| Шифр: |
urn:nbn:de:hebis:04-z2018-05055 |
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| Дата публикации: |
2018-11-14 |
| Datum der Annahme: |
2017-12-12 |
| Downloads: |
57 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018) |
| Lizenz: |
https://rightsstatements.org/vocab/InC-NC/1.0/ |
| Доступ через URL: |
https://archiv.ub.uni-marburg.de/diss/z2018/0505 https://doi.org/10.17192/z2018.0505 |