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Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...
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| 第一著者: | |
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| その他の著者: | |
| フォーマット: | Dissertation |
| 言語: | 英語 |
| 出版事項: |
Philipps-Universität Marburg
2017
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| 主題: | |
| オンライン･アクセス: | PDFフルテキスト |
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PDFフルテキスト| 請求記号: |
urn:nbn:de:hebis:04-z2018-05055 |
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| 出版日付: |
2018-11-14 |
| Datum der Annahme: |
2017-12-12 |
| Downloads: |
58 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018) |
| Lizenz: |
https://rightsstatements.org/vocab/InC-NC/1.0/ |
| アクセスURL: |
https://archiv.ub.uni-marburg.de/diss/z2018/0505 https://doi.org/10.17192/z2018.0505 |