Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...
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Daljnji autori: | |
Format: | Dissertation |
Jezik: | engleski |
Izdano: |
Philipps-Universität Marburg
2017
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Teme: | |
Online pristup: | PDF cijeli tekst |
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Internet
PDF cijeli tekstSignatura: |
urn:nbn:de:hebis:04-z2018-05055 |
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Datum izdanja: |
2018-11-14 |
Datum der Annahme: |
2017-12-12 |
Downloads: |
58 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018) |
Lizenz: |
https://rightsstatements.org/vocab/InC-NC/1.0/ |
URL pristupa: |
https://archiv.ub.uni-marburg.de/diss/z2018/0505 https://doi.org/10.17192/z2018.0505 |