Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...

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Detalles Bibliográficos
Autor Principal: Fuchs, Christian
Outros autores: Stolz, Wolfgang (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Formato: Dissertation
Idioma:inglés
Publicado: Philipps-Universität Marburg 2017
Schlagworte:
III/V Halbleiter
MOVPE
VECSEL
Near-infrared Laser
Physik
MOCVD
Edge Emitter
Nahinfrarot-Laser
Epitaxy
Type-II Heterostructures
Epitaxie
Typ-II Heterostrukturen
III/V Semiconductors
Kantenemitter
Physics
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Número de Clasificación: urn:nbn:de:hebis:04-z2018-05055
Data de Publicación: 2018-11-14
Datum der Annahme: 2017-12-12
Downloads: 57 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
URL de acceso: https://archiv.ub.uni-marburg.de/diss/z2018/0505
https://doi.org/10.17192/z2018.0505

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