Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...

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Détails bibliographiques
Auteur principal: Fuchs, Christian
Autres auteurs: Stolz, Wolfgang (Prof. Dr.) (Directeur de thèse)
Format: Dissertation
Langue:anglais
Publié: Philipps-Universität Marburg 2017
Sujets:
III/V Halbleiter
MOVPE
VECSEL
Near-infrared Laser
Physik
MOCVD
Edge Emitter
Nahinfrarot-Laser
Epitaxy
Type-II Heterostructures
Epitaxie
Typ-II Heterostrukturen
III/V Semiconductors
Kantenemitter
Physics
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Informations d'exemplaires de
Cote: urn:nbn:de:hebis:04-z2018-05055
Date de publication: 2018-11-14
Datum der Annahme: 2017-12-12
Downloads: 58 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
URL d'accès: https://archiv.ub.uni-marburg.de/diss/z2018/0505
https://doi.org/10.17192/z2018.0505

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