Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijä: Fuchs, Christian
Muut tekijät: Stolz, Wolfgang (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Aineistotyyppi: Dissertation
Kieli:englanti
Julkaistu: Philipps-Universität Marburg 2017
Aiheet:
III/V Halbleiter
MOVPE
VECSEL
Near-infrared Laser
Physik
MOCVD
Edge Emitter
Nahinfrarot-Laser
Epitaxy
Type-II Heterostructures
Epitaxie
Typ-II Heterostrukturen
III/V Semiconductors
Kantenemitter
Physics
Linkit:PDF-kokoteksti
Tagit: Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!

Internet

PDF-kokoteksti

Saatavuus:
Hyllypaikka: urn:nbn:de:hebis:04-z2018-05055
Julkaisupäivä: 2018-11-14
Datum der Annahme: 2017-12-12
Downloads: 58 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
Linkki aineistoon: https://archiv.ub.uni-marburg.de/diss/z2018/0505
https://doi.org/10.17192/z2018.0505

Samankaltaisia teoksia