Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...

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Xehetasun bibliografikoak
Egile nagusia: Fuchs, Christian
Beste egile batzuk: Stolz, Wolfgang (Prof. Dr.) (Tesi aholkularia)
Formatua: Dissertation
Hizkuntza:ingelesa
Argitaratua: Philipps-Universität Marburg 2017
Gaiak:
III/V Halbleiter
MOVPE
VECSEL
Near-infrared Laser
Physik
MOCVD
Edge Emitter
Nahinfrarot-Laser
Epitaxy
Type-II Heterostructures
Epitaxie
Typ-II Heterostrukturen
III/V Semiconductors
Kantenemitter
Physics
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Aleari buruzko argibideak
Sailkapena: urn:nbn:de:hebis:04-z2018-05055
Argitaratze data: 2018-11-14
Datum der Annahme: 2017-12-12
Downloads: 57 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
URL sarbidea: https://archiv.ub.uni-marburg.de/diss/z2018/0505
https://doi.org/10.17192/z2018.0505

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