Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...
Wedi'i Gadw mewn:
Prif Awdur: | |
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Awduron Eraill: | |
Fformat: | Dissertation |
Iaith: | Saesneg |
Cyhoeddwyd: |
Philipps-Universität Marburg
2017
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Pynciau: | |
Mynediad Ar-lein: | Testun PDF llawn |
Tagiau: |
Ychwanegu Tag
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Rhyngrwyd
Testun PDF llawnRhif Galw: |
urn:nbn:de:hebis:04-z2018-05055 |
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Dyddiad Cyhoeddi: |
2018-11-14 |
Datum der Annahme: |
2017-12-12 |
Downloads: |
58 (2024), 153 (2023), 206 (2022), 120 (2021), 111 (2020), 132 (2019), 4 (2018) |
Lizenz: |
https://rightsstatements.org/vocab/InC-NC/1.0/ |
URL mynediad: |
https://archiv.ub.uni-marburg.de/diss/z2018/0505 https://doi.org/10.17192/z2018.0505 |