Optical and Transport Properties of Disordered Materials by Computer Simulation

This work is a summary of a study on optical and transport properties of disordered materials. Since disorder plays an important role in various optoelectronic phenomena, a suitable theoretical description of clutter effects is crucial for the development of electronic devices such as transistors, m...

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Đã lưu trong:
Chi tiết về thư mục
Tác giả chính: Valkovskii, Vitalii
Tác giả khác: Baranovskii, Sergei (Prof. Dr.) (Cố vấn luận án)
Định dạng: Dissertation
Ngôn ngữ:Tiếng Anh
Được phát hành: Philipps-Universität Marburg 2018
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Miêu tả
Tóm tắt:This work is a summary of a study on optical and transport properties of disordered materials. Since disorder plays an important role in various optoelectronic phenomena, a suitable theoretical description of clutter effects is crucial for the development of electronic devices such as transistors, memory, light emitting diodes, and solar cells. This work addresses some of the problems associated with the recombination of excitons in disordered materials. Furthermore, the mechanism of release of carriers from traps and the concept of effective temperature for hopping transport, with special emphasis on the Kinetic Monte Carlo Method (KMC), are considered.
Mô tả vật lý:98 Seiten
DOI:10.17192/z2018.0494