Optical and Transport Properties of Disordered Materials by Computer Simulation

This work is a summary of a study on optical and transport properties of disordered materials. Since disorder plays an important role in various optoelectronic phenomena, a suitable theoretical description of clutter effects is crucial for the development of electronic devices such as transistors, m...

Бүрэн тодорхойлолт

-д хадгалсан:
Номзүйн дэлгэрэнгүй
Үндсэн зохиолч: Valkovskii, Vitalii
Бусад зохиолчид: Baranovskii, Sergei (Prof. Dr.) (Дипломын ажлын зөвлөх)
Формат: Dissertation
Хэл сонгох:англи
Хэвлэсэн: Philipps-Universität Marburg 2018
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Тодорхойлолт
Тойм:This work is a summary of a study on optical and transport properties of disordered materials. Since disorder plays an important role in various optoelectronic phenomena, a suitable theoretical description of clutter effects is crucial for the development of electronic devices such as transistors, memory, light emitting diodes, and solar cells. This work addresses some of the problems associated with the recombination of excitons in disordered materials. Furthermore, the mechanism of release of carriers from traps and the concept of effective temperature for hopping transport, with special emphasis on the Kinetic Monte Carlo Method (KMC), are considered.
Биет тодорхойлолт:98 Seiten
DOI:10.17192/z2018.0494