Optical and Transport Properties of Disordered Materials by Computer Simulation

This work is a summary of a study on optical and transport properties of disordered materials. Since disorder plays an important role in various optoelectronic phenomena, a suitable theoretical description of clutter effects is crucial for the development of electronic devices such as transistors, m...

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Hlavní autor: Valkovskii, Vitalii
Další autoři: Baranovskii, Sergei (Prof. Dr.) (Vedoucí práce)
Médium: Dissertation
Jazyk:angličtina
Vydáno: Philipps-Universität Marburg 2018
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Shrnutí:This work is a summary of a study on optical and transport properties of disordered materials. Since disorder plays an important role in various optoelectronic phenomena, a suitable theoretical description of clutter effects is crucial for the development of electronic devices such as transistors, memory, light emitting diodes, and solar cells. This work addresses some of the problems associated with the recombination of excitons in disordered materials. Furthermore, the mechanism of release of carriers from traps and the concept of effective temperature for hopping transport, with special emphasis on the Kinetic Monte Carlo Method (KMC), are considered.
Fyzický popis:98 Seiten
DOI:10.17192/z2018.0494