Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate
The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...
में बचाया:
मुख्य लेखक: | |
---|---|
अन्य लेखक: | |
स्वरूप: | Dissertation |
भाषा: | अंग्रेज़ी |
प्रकाशित: |
Philipps-Universität Marburg
2017
|
विषय: | |
ऑनलाइन पहुंच: | पीडीएफ पूर्ण पाठ |
टैग: |
टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
|
No references were found for this record.