Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.

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Bibliografske podrobnosti
Glavni avtor: Oelerich, Jan Oliver
Drugi avtorji: Baranovski, Sergei (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Format: Dissertation
Jezik:angleščina
Izdano: Philipps-Universität Marburg 2015
Teme:
III-V semiconductors
Amorphous semiconductors, metallic glasses, glasses
III-V semiconductor-to-semiconductor contacts, p-n junctions, and
Festkörper
Ungeordnete Halbleiter
Amorphous semiconductors
Halbleiter
Disordered Semiconductors
Simulation
Physik
Heteroepitaxie
Physics
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