Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.

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Bibliografiske detaljer
Hovedforfatter: Oelerich, Jan Oliver
Andre forfattere: Baranovski, Sergei (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Format: Dissertation
Sprog:engelsk
Udgivet: Philipps-Universität Marburg 2015
Fag:
III-V semiconductors
Amorphous semiconductors, metallic glasses, glasses
III-V semiconductor-to-semiconductor contacts, p-n junctions, and
Festkörper
Ungeordnete Halbleiter
Amorphous semiconductors
Halbleiter
Disordered Semiconductors
Simulation
Physik
Heteroepitaxie
Physics
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