Transmission electron microscopic investigations of heteroepitaxial III/V semiconductor thin layer and quantum well structures

Transmission electron microscopic investigations of heteroepitaxial III/V semiconductor thin layer and quantum well structures

The first part of the thesis presents compositional evaluation of ternary quantum well structures grown on GaAs and GaP substrates using the chemical sensitive 002 dark field imaging in Transmission Electron Microscopy (TEM). The composition retrieved by the dark field intensity measurements and the...

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Detalles Bibliográficos
Autor Principal: Németh Igor
Outros autores: Volz, Kerstin (Dr.) (BetreuerIn (Doktorarbeit))
Formato: Dissertation
Idioma:inglés
Publicado: Philipps-Universität Marburg 2008
Schlagworte:
TEM
Refined structure factor calculations
Physik
Heteroepitaxie
Durchstrahlungselektronenmikroskopie
Verfeinerte Strukturfaktorberechnungen
Planar defects
Strukturfaktor
Gitterbaufehler
Planardefekte
Physics
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