Investigation of light-induced defects in hydrogenated amorphous silicon by low temperature annealing and pulsed degradation

Investigation of light-induced defects in hydrogenated amorphous silicon by low temperature annealing and pulsed degradation

Kaydedildi:
Detaylı Bibliyografya
Yazar: Heck, Stephan
Materyal Türü: Dissertation
Dil:İngilizce
Baskı/Yayın Bilgisi: Philipps-Universität Marburg 2002
Konular:
Hydrogenated amorphous silicon
Physik
Physics
Online Erişim:PDF Tam Metin
Etiketler: Etiketle
Etiket eklenmemiş, İlk siz ekleyin!

Internet

PDF Tam Metin

Detaylı Erişim Bilgileri
Yer Numarası: urn:nbn:de:hebis:04-z2002-04083
Yayın Tarihi: 2003-08-06
Datum der Annahme: 2002-11-04
Downloads: 42 (2024), 71 (2023), 39 (2022), 38 (2021), 29 (2020), 45 (2019), 31 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
Erişim Adresi URL: https://archiv.ub.uni-marburg.de/diss/z2002/0408
https://doi.org/10.17192/z2002.0408

Benzer Materyaller