Investigation of light-induced defects in hydrogenated amorphous silicon by low temperature annealing and pulsed degradation

Investigation of light-induced defects in hydrogenated amorphous silicon by low temperature annealing and pulsed degradation

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Bibliographic Details
Main Author: Heck, Stephan
Format: Doctoral Thesis
Language:English
Published: Philipps-Universität Marburg 2002
Subjects:
Hydrogenated amorphous silicon
Physik
Physics
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Call Number: urn:nbn:de:hebis:04-z2002-04083
Publication Date: 2003-08-06
Date of Acceptance: 2002-11-04
Downloads: 42 (2024), 71 (2023), 39 (2022), 38 (2021), 29 (2020), 45 (2019), 31 (2018)
License: https://rightsstatements.org/vocab/InC-NC/1.0/
Access URL: https://archiv.ub.uni-marburg.de/diss/z2002/0408
https://doi.org/10.17192/z2002.0408

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