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Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM
Most of today’s electronic devices, like solar cells and batteries, are based on nanometer-scale built-in electric fields. Accordingly, characterization of fields at such small scales has become an important task in the optimization of these devices. In this study, with GaAs-based p−n junctions as t...
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| 主要な著者: | , , , , , , , |
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| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
Philipps-Universität Marburg
2021
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| 主題: | |
| オンライン･アクセス: | PDFフルテキスト |
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| 要約: | Most of today’s electronic devices, like solar cells and batteries, are based on nanometer-scale built-in electric fields. Accordingly, characterization of fields at such small scales has become an important task in the optimization of these devices. In this study, with GaAs-based p−n junctions as the example, key characteristics such as doping concentrations, polarity, and the depletion width are derived quantitatively using four-dimensional scanning transmission electron microscopy (4DSTEM). The built-in electric fields are determined by the shift they introduce to the center-of-mass of electron diffraction patterns at subnanometer spatial resolution. The method is applied successfully to characterize two p−n junctions with different doping concentrations. This highlights the potential of this method to directly visualize
intentional or unintentional nanoscale electric fields in real-life devices, e.g., batteries, transistors, and solar cells. |
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| 物理的記述: | 8 Seiten |
| DOI: | 10.17192/es2021.0026 |