Epitaxial growth and characterization of dilute nitride based “W”-quantum well heterostructures for laser applications

In this present thesis, the growth by metal organic vapor phase epitaxy (MOVPE) of GaAs-based materials is investigated to shift the emission wavelength to longer wavelengths. This was addressed by incorporating dilute amounts of nitrogen into “W” type-II heterostructures (WQWH). As materials, studi...

Descrición completa

Gardado en:
Detalles Bibliográficos
Autor Principal: Lehr, Jannik
Outros autores: Stolz, Wolfgang (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Formato: Dissertation
Idioma:inglés
Publicado: Philipps-Universität Marburg 2022
Schlagworte:
Acceso en liña:Texto completo PDF
Tags: Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!