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Epitaxial growth and characterization of dilute nitride based “W”-quantum well heterostructures for laser applications
In this present thesis, the growth by metal organic vapor phase epitaxy (MOVPE) of GaAs-based materials is investigated to shift the emission wavelength to longer wavelengths. This was addressed by incorporating dilute amounts of nitrogen into “W” type-II heterostructures (WQWH). As materials, studi...
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| Muut tekijät: | |
| Aineistotyyppi: | Dissertation |
| Kieli: | englanti |
| Julkaistu: |
Philipps-Universität Marburg
2022
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| Aiheet: | |
| Linkit: | PDF-kokoteksti |
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