Quantitative Scanning Transmission Electron Microscopy for III-V Semiconductor Heterostructures Utilizing Multi-Slice Image Simulations

Quantitative Scanning Transmission Electron Microscopy for III-V Semiconductor Heterostructures Utilizing Multi-Slice Image Simulations

Quantitative STEM can satisfy the demand of modern semiconductor device development for atomically resolved structural information. Thereby, quantitative evaluations can be based on STEM intensities only, a combination of STEM intensities with different methods or a comparison of STEM intensities to...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijä: Kükelhan, Pirmin
Muut tekijät: Volz, Kerstin (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Aineistotyyppi: Dissertation
Kieli:englanti
Julkaistu: Philipps-Universität Marburg 2019
Aiheet:
Physik
quantitative STEM
Bildsimulationen
Quantitative Rastertransmissionselektronenmikroskopie
Halbleiter
III-V Halbleiter
multi-slice simulations
III-V semiconductors
Elektronenmikroskopie
Physics
Linkit:PDF-kokoteksti
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