(Ga,In)(N,As,Sb) Solar Cells: N Incorporation using Novel Precursor in MOVPE Growth and Solar Cell Characteristics

(Ga,In)(N,As,Sb) Solar Cells: N Incorporation using Novel Precursor in MOVPE Growth and Solar Cell Characteristics

This work presents a full investigation cycle of a new precursor, beginning with the synthesis of the precursors of interest. The first MOVPE investigations in different material systems like GaAs, (GaIn)As and Ga(NAsSb) were performed and finally the realization and investigation of several solar c...

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Bibliographic Details
Main Author: Sterzer, Eduard
Contributors: Volz, Kerstin (Prof. Dr.) (Thesis advisor)
Format: Doctoral Thesis
Language:English
Published: Philipps-Universität Marburg 2018
Subjects:
Epitaxie
Solarzellen
Solar cells
Physik
GaInNAs
DTBAA
MOVPE
Präkursoren
Precursor
dilute nitrides
Verdünnt-Stickstoffhaltiges GaAs
Physics
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Call Number: urn:nbn:de:hebis:04-z2018-02464
Publication Date: 2018-09-24
Date of Acceptance: 2018-07-20
Downloads: 185 (2024), 141 (2023), 183 (2022), 190 (2021), 175 (2020), 200 (2019), 19 (2018)
License: https://creativecommons.org/licenses/by-nc-sa/4.0
Access URL: https://archiv.ub.uni-marburg.de/diss/z2018/0246
https://doi.org/10.17192/z2018.0246

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