In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In order to handle toxic and phyrophoric precursors inside a TEM and therefore facilitate group V stabilized thermal annealing experiments, significant changes of the original in situ system (designed and produced by Protochips) are necessary. To further ensure safely when storing and transfering th...

Olles dieđut

Furkejuvvon:
Bibliográfalaš dieđut
Váldodahkki: Straubinger, Rainer
Eará dahkkit: Volz, Kerstin (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Materiálatiipa: Dissertation
Giella:eaŋgalasgiella
Almmustuhtton: Philipps-Universität Marburg 2018
Fáttát:
in situ
Kristallwachstum, Thermisches Aufheizen,
Halbleiter
crystal growth
Thermal annealing
III/V semiconductor
In Situ
Physik
Semiconductor materials
Halbleiterphysik
Raster-Transmissions-Elektronenmikroskopie
Physics
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