In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In order to handle toxic and phyrophoric precursors inside a TEM and therefore facilitate group V stabilized thermal annealing experiments, significant changes of the original in situ system (designed and produced by Protochips) are necessary. To further ensure safely when storing and transfering th...

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Bibliografski detalji
Glavni autor: Straubinger, Rainer
Daljnji autori: Volz, Kerstin (Prof. Dr.) (Savjetnik disertacije)
Format: Dissertation
Jezik:engleski
Izdano: Philipps-Universität Marburg 2018
Teme:
in situ
Kristallwachstum, Thermisches Aufheizen,
Halbleiter
crystal growth
Thermal annealing
III/V semiconductor
In Situ
Physik
Semiconductor materials
Halbleiterphysik
Raster-Transmissions-Elektronenmikroskopie
Physics
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