In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In order to handle toxic and phyrophoric precursors inside a TEM and therefore facilitate group V stabilized thermal annealing experiments, significant changes of the original in situ system (designed and produced by Protochips) are necessary. To further ensure safely when storing and transfering th...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijä: Straubinger, Rainer
Muut tekijät: Volz, Kerstin (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Aineistotyyppi: Dissertation
Kieli:englanti
Julkaistu: Philipps-Universität Marburg 2018
Aiheet:
in situ
Kristallwachstum, Thermisches Aufheizen,
Halbleiter
crystal growth
Thermal annealing
III/V semiconductor
In Situ
Physik
Semiconductor materials
Halbleiterphysik
Raster-Transmissions-Elektronenmikroskopie
Physics
Linkit:PDF-kokoteksti
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