In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In order to handle toxic and phyrophoric precursors inside a TEM and therefore facilitate group V stabilized thermal annealing experiments, significant changes of the original in situ system (designed and produced by Protochips) are necessary. To further ensure safely when storing and transfering th...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Prif Awdur: Straubinger, Rainer
Awduron Eraill: Volz, Kerstin (Prof. Dr.) (Cynghorydd traethodau ymchwil)
Fformat: Dissertation
Iaith:Saesneg
Cyhoeddwyd: Philipps-Universität Marburg 2018
Pynciau:
in situ
Kristallwachstum, Thermisches Aufheizen,
Halbleiter
crystal growth
Thermal annealing
III/V semiconductor
In Situ
Physik
Semiconductor materials
Halbleiterphysik
Raster-Transmissions-Elektronenmikroskopie
Physics
Mynediad Ar-lein:Testun PDF llawn
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
No references were found for this record.

Eitemau Tebyg