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Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate
The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...
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| Формат: | Dissertation |
| Мова: | англійська |
| Опубліковано: |
Philipps-Universität Marburg
2017
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| Онлайн доступ: | PDF-повний текст |
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