Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.

Furkejuvvon:
Bibliográfalaš dieđut
Váldodahkki: Oelerich, Jan Oliver
Eará dahkkit: Baranovski, Sergei (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Materiálatiipa: Dissertation
Giella:eaŋgalasgiella
Almmustuhtton: Philipps-Universität Marburg 2015
Fáttát:
III-V semiconductors
Amorphous semiconductors, metallic glasses, glasses
III-V semiconductor-to-semiconductor contacts, p-n junctions, and
Festkörper
Ungeordnete Halbleiter
Amorphous semiconductors
Halbleiter
Disordered Semiconductors
Simulation
Physik
Heteroepitaxie
Physics
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Govvádus
Čoahkkáigeassu:This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.
DOI:10.17192/z2015.0390

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