Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.

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Detalles Bibliográficos
Autor Principal: Oelerich, Jan Oliver
Outros autores: Baranovski, Sergei (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Formato: Dissertation
Idioma:inglés
Publicado: Philipps-Universität Marburg 2015
Schlagworte:
III-V semiconductors
Amorphous semiconductors, metallic glasses, glasses
III-V semiconductor-to-semiconductor contacts, p-n junctions, and
Festkörper
Ungeordnete Halbleiter
Amorphous semiconductors
Halbleiter
Disordered Semiconductors
Simulation
Physik
Heteroepitaxie
Physics
Acceso en liña:Texto completo PDF
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Descripción
Zusammenfassung:This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.
DOI:10.17192/z2015.0390

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