Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.

Guardado en:
Detalles Bibliográficos
Autor principal: Oelerich, Jan Oliver
Otros Autores: Baranovski, Sergei (Prof. Dr.) (Orientador)
Formato: Dissertation
Lenguaje:inglés
Publicado: Philipps-Universität Marburg 2015
Materias:
III-V semiconductors
Amorphous semiconductors, metallic glasses, glasses
III-V semiconductor-to-semiconductor contacts, p-n junctions, and
Festkörper
Ungeordnete Halbleiter
Amorphous semiconductors
Halbleiter
Disordered Semiconductors
Simulation
Physik
Heteroepitaxie
Physics
Acceso en línea:Texto Completo PDF
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.
DOI:10.17192/z2015.0390

Ejemplares similares