Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

Oelerich, Jan Oliver

Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

This PhD thesis deals with the computer simulation of III/V semiconductor heteroepitaxy and the description of charge transport in disordered inorganic and organic semiconductors.

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Detalhes bibliográficos
Autor principal:	Oelerich, Jan Oliver
Outros Autores:	Baranovski, Sergei (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Formato:	Dissertation
Idioma:	inglês
Publicado em:	Philipps-Universität Marburg 2015
Assuntos:	III-V semiconductors Amorphous semiconductors, metallic glasses, glasses III-V semiconductor-to-semiconductor contacts, p-n junctions, and Festkörper Ungeordnete Halbleiter Amorphous semiconductors Halbleiter Disordered Semiconductors Simulation Physik Heteroepitaxie Physics
Acesso em linha:	Texto integral em PDF
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Theoretical Modeling of Kinetic Phenomena of Atoms and Charge Carriers in Disordered Materials

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