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Modeling of Optical Properties of Semiconductor Heterostructures
The equations of motion necessary for the computation of luminescence spectra in realistic semiconductor heterostructures are presented. The combination of these multiband semiconductor luminescence equations on the level of two-particle correlations and scattering terms in 2nd Born-Markov approxima...
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| Formatua: | Dissertation |
| Hizkuntza: | ingelesa |
| Argitaratua: |
Philipps-Universität Marburg
2005
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| Sarrera elektronikoa: | PDF testu osoa |
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| Gaia: | The equations of motion necessary for the computation of luminescence spectra in realistic semiconductor heterostructures are presented. The combination of these multiband semiconductor luminescence equations on the level of two-particle correlations and scattering terms in 2nd Born-Markov approximation with a k.p-bandstructure calculation allows the quantitative modeling of luminescence spectra. This is demonstrated in theory-to-experiment comparisons. It is also shown why simple rate equations for the luminescence fail at high excitation intensity.
Combining bandstructure calculation, semiconductor luminescence equations, and semiconductor Bloch equations it becomes possible to compute a variety of optical properties of semiconductors consistently and quantitatively. This is utilized to compute the appropriate gain spectra from measured luminescence spectra. It is further used to study the expected lasing properties and the carrier loss mechanisms of GaInNAs/GaAs structures in the technologically interesting wavelength range of 1550nm. Finally, the optical properties of a type I to type II transition in the band gap alignment in heterostructures are investigated. In doing so, photomodulated reflectance spectra are computed and analyzed with the help of microscopic theory for the first time. |
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| Deskribapen fisikoa: | 127 Seiten |
| DOI: | 10.17192/z2006.0294 |