Defekte in epitaktisch gewachsenen Silizium-Schichten (Niedertemperaturepitaxie)

Gegenstand der Arbeit ist die Analyse von Defekten in Silizium Schichten, die mit Elektronenzyklotronresonanz unterstützter Gasphasenabscheidung ("electron cyclotron resonance chemical vapour deposition", ECRCVD) bei Substrattemperaturen unterhalb 600°C deponiert wurden. Untersucht wurde e...

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Bibliographic Details
Main Author: Petter, Kai
Contributors: Fuhs, Walther (Prof.) (Thesis advisor)
Format: Dissertation
Published: Philipps-Universität Marburg 2006
Online Access:PDF Full Text
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Call Number: urn:nbn:de:hebis:04-z2006-00957
Downloads: 10 (2021), 15 (2020), 19 (2019), 10 (2018), 27 (2017)
Publication Date: 2006-04-11
License: According to UrhG § 31 (2), the author has granted the University Library Marburg the right of use for electronic publication on the Internet and for archiving on its archive server. He has declared that with the granting of the right of use according to UrhG § 31 (3) no exclusive rights of third parties are violated. All other rights for the exploitation of the publication remain with the author.
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