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Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM
Surface segregation and interaction effects of In and Sb in (GaIn)As/Ga(AsSb)/(GaIn)As- “W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular dark field scanning transmission electron microscopy with atomic resolution. “W”-QWHs are promising candidates for type-II...
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| Autoren: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | inglés |
| Publicado: |
Philipps-Universität Marburg
2019
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| Schlagworte: | |
| Acceso en liña: | Texto completo PDF |
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