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Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM
Surface segregation and interaction effects of In and Sb in (GaIn)As/Ga(AsSb)/(GaIn)As- “W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular dark field scanning transmission electron microscopy with atomic resolution. “W”-QWHs are promising candidates for type-II...
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| Главные авторы: | , , , , , , , |
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| Формат: | Статья |
| Язык: | английский |
| Опубликовано: |
Philipps-Universität Marburg
2019
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| Предметы: | |
| Online-ссылка: | PDF-полный текст |
| Метки: |
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Internet
PDF-полный текст| Шифр: |
urn:nbn:de:hebis:04-es2021-00238 |
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| Дата публикации: |
2021-11-03 |
| Downloads: |
43 (2024), 68 (2023), 50 (2022), 12 (2021) |
| Lizenz: |
https://creativecommons.org/licenses/by-nc-sa/4.0 |
| Доступ через URL: |
https://archiv.ub.uni-marburg.de/es/2021/0023 https://doi.org/10.17192/es2021.0023 |