Dokument

Zusammenfassung:
Eine wesentliche Herausforderung im Streben nach einem detaillierten Verständnis der optoelektronischen Eigenschaften von Halbleitern besteht in der Analyse des durch Coulomb-Wechselwirkung korrelierten Vielteilchensystems der Ladungsträger im Material. Dieses Vielteilchensystem wird geprägt durch vielfältige aus der Coulomb-Wechselwirkung resultierende Effekte. In exzitonischen Systemen kann dies - vor allem im Zusammenwirken mit Terahertz-Anregungen - zu bemerkenswerten Übergangsmechanismen führen. Allgemein ist das Hierarchieproblem der gekoppelten Vielteilchendynamik nur adäquat behandelbar, wenn problemangepasste systematische Approximationen vorgenommen werden. Daher ist eine effektive Behandlung der Coulomb-Streueffekte in der Vielteilchentheorie optisch angeregter Halbleiter notwendig, um die entsprechend in der Spektroskopie dieser Materialsysteme auftretenden Effekte mit hinreichender Genauigkeit aber angemessenem numerischem Aufwand effizient zu modellieren und zu erklären.

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