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Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...
में बचाया:
| मुख्य लेखक: | |
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| अन्य लेखक: | |
| स्वरूप: | Dissertation |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
Philipps-Universität Marburg
2017
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| विषय: | |
| ऑनलाइन पहुंच: | पीडीएफ पूर्ण पाठ |
| टैग: |
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