Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate

The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...

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Bibliográfalaš dieđut
Váldodahkki: Ott, Andrea
Eará dahkkit: Volz, Kerstin (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Materiálatiipa: Dissertation
Giella:eaŋgalasgiella
Almmustuhtton: Philipps-Universität Marburg 2017
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