Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate

Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate

The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...

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Bibliographic Details
Main Author: Ott, Andrea
Contributors: Volz, Kerstin (Prof. Dr.) (Thesis advisor)
Format: Doctoral Thesis
Language:English
Published: Philipps-Universität Marburg 2017
Subjects:
Verspannung
Halbleiter
Elektronenmikroskopie
Metamorphes Wachstum
Physik,
GaSb
Lomer dislocations,strain
electron microscopy
metamorphic growth
Ga(AsSb)
Lomer Versetzungen
semiconductor
Physik
Ga(PSb)
Physics
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