Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate

The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Prif Awdur: Ott, Andrea
Awduron Eraill: Volz, Kerstin (Prof. Dr.) (Cynghorydd traethodau ymchwil)
Fformat: Dissertation
Iaith:Saesneg
Cyhoeddwyd: Philipps-Universität Marburg 2017
Pynciau:
Mynediad Ar-lein:Testun PDF llawn
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!