Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate

Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate

The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...

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Detalhes bibliográficos
Autor principal: Ott, Andrea
Outros Autores: Volz, Kerstin (Prof. Dr.) (Orientador)
Formato: Dissertation
Idioma:inglês
Publicado em: Philipps-Universität Marburg 2017
Assuntos:
Verspannung
Halbleiter
Elektronenmikroskopie
Metamorphes Wachstum
Physik,
GaSb
Lomer dislocations,strain
electron microscopy
metamorphic growth
Ga(AsSb)
Lomer Versetzungen
semiconductor
Physik
Ga(PSb)
Physics
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Detalhes do Exemplar
Número de Chamada: urn:nbn:de:hebis:04-z2017-01160
Data de Publicação: 2017-03-15
Datum der Annahme: 2017-02-13
Downloads: 79 (2024), 82 (2023), 50 (2022), 22 (2021), 4 (2020), 16 (2019), 15 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
Acessar a URL: https://archiv.ub.uni-marburg.de/diss/z2017/0116
https://doi.org/10.17192/z2017.0116

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